Indium gallium aluminium nitride

Indium gallium aluminium nitride (InGaAlN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as MOCVD, MBE, PLD, etc. This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs. The chemical symbol for the compound is InGaAlN.

Indium compounds

InAs InBr InBr₃ InCl₃ InF₃ InH₃ In(C₅H₇O₂)₃ InN In(OH)₃ InP InSb In₂O₃ In₂S₃ In₂(SO₄)₃ In₂Se₃ In₂Te₃

Gallium compounds

GaAs GaBr₃ GaCl₃ GaF₃ GaI₃ GaN Ga(OH)₃ Ga(NO₃)₃ Ga(C₅H₇O₂)₃ GaP GaS GaSb GaSe GaTe Ga₂O₃ Ga₂S₃ Ga₂Se₃ Ga₂Te₃

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Aluminium compounds

Al(I)

Al(II)

Al(III)

Alums	(NH₄)Al(SO₄)₂ KAl(SO₄)₂ NaAl(SO₄)₂

Organoaluminium(III) compounds	(Al(CH₃)₃)₂ (Al(C₂H₅)₃)₂ Al(CH₂CH(CH₃)₂)₃ Al(C₂H₅)₂Cl Al(C₂H₅)₂CN Al(CH₂CH(CH₃)₂)₂H Al(C₂H₅)₂Cl₂C₂H₅Cl Ti(C₅H₅)₂CH₂ClAl(CH₃)₂

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