Tantalum nitride

Tantalum nitride

Names
Other names Tantalum mononitride
Identifiers
CAS Number	12033-62-4
3D model (Jmol)	Interactive image
ECHA InfoCard	100.031.613
EC Number	234-788-4
PubChem	82832
InChI InChI=1S/N.Ta
SMILES N#[Ta]
Properties
Chemical formula	TaN
Molar mass	194.955 g/mol
Appearance	black crystals
Density	14.3 g/cm^3
Melting point	3,090 °C (5,590 °F; 3,360 K)
Solubility in water	insoluble
Structure
Crystal structure	Hexagonal, hP6
Space group	P-62m, No. 189
Hazards
Flash point	Non-flammable
Related compounds
Other cations	Vanadium nitride Niobium nitride
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Infobox references

Tantalum nitride (TaN) is an inorganic chemical compound. It is sometimes used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.^[1]

References

1. Akashi, Teruhisa (2005). "Fabrication of a Tantalum-Nitride Thin-Film Resistor with a Low-Variability Resistance" (PDF). Retrieved 2006-09-02.

Salts and covalent derivatives of the Nitride ion
NH3																	He(N2)11
Li3N	Be3N2											BN	β-C3N4 g-C3N4	N2	NxOy	NF3	Ne
Na3N	Mg3N2											AlN	SiN	PN P3N5	SxNy SN S4N4	NCl3	Ar
K3N	Ca3N2	ScN	TiN	VN	CrN Cr2N	MnxNy	FexNy	CoN	Ni3N	CuN	Zn3N2	GaN	Ge3N4	As	Se	NBr3	Kr
Rb3N	Sr3N2	YN	ZrN	NbN	β-Mo2N	Tc	Ru	Rh	PdN	Ag3N	CdN	In	Sn	Sb	Te	I	Xe
Cs3N	Ba3N2		Hf3N4	TaN	WN	Re	Os	Ir	Pt	Au	Hg3N2	TlN	Pb	BiN	Po	At	Rn
Fr	Ra		Rf	Db	Sg	Bh	Hs	Mt	Ds	Rg	Cn	Nh	Fl	Mc	Lv	Ts	Og
		↓
		La	CeN	Pr	Nd	Pm	Sm	Eu	GdN	Tb	Dy	Ho	Er	Tm	Yb	Lu
		Ac	Th	Pa	UN	Np	Pu	Am	Cm	Bk	Cf	Es	Fm	Md	No	Lr